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  1994. 5. 20 1/2 semiconductor technical data KTC1020 epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features  excellecnt h fe linearity : h fe (2)=25min. : v ce =6v, i c =400ma.  1 watt amplifier application.  complementary to kta1021. maximum ratings (ta=25 1 ) 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. emitter 2. collector 3. base 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current i c 500 ma emitter current i e -500 ma collector power dissipation p c 400 mw junction temperature t j 150 1 storage temperature range t stg -55  150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1  a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1  a dc current gain h fe (1) v ce =1v, i c =100ma 100 - 240 h fe (2) v ce =6v, i c =400ma 25 - - collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v base-emitter voltage v be v ce =1v, i c =100ma - 0.8 1.0 v transition frequency f t v cb =6v, i c =20ma - 300 - mhz collector output capacitance c ob v cb =6v, i e =0, f=1mhz - 7.0 - pf
1994. 5. 20 2/2 KTC1020 revision no : 0 0.01 ce(sat) collector current i (ma) v - i collector-emitter saturation c 0.5 1 3 10 i - v cce ce collector-emitter voltage v (v) 0 1 100 c 0 collector current i (ma) dc current gain h fe 500 0.5 collector current i (ma) c c fe h - i 10 base current i ( a) 5 b 2k 0.4 0.2 0 base-emitter voltage v (v) be be b i - v collector power dissipation p (mw) 0 c 100 50 25 0 ambient temperature ta ( c) pc - ta 2345 200 300 400 500 i =0.1ma b 0.5ma 1.0ma 2.0ma 3.0ma 4.0ma 6.0ma common emitter ta=25 c 1 3 5 10 30 50 100 500 10 30 50 100 300 common emitter ta =100 c ta =-25 c ta =25 c v =6v ce ce v =1v 0.6 0.8 1.0 30 50 100 300 500 1k common emitter v =6v ce ta = 1 0 0 c ta=25 c ta=-25 c c voltage v (v) ce(sat) 30 100 500 0.03 0.05 0.1 0.3 0.5 1 common emitter i /i =10 c b ta=100 c ta=25 c ta=-25 c 75 100 125 150 175 200 200 300 400 500 600 300 300


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